參數(shù)資料
型號(hào): 2SC6033
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type
中文描述: 東芝晶體硅npn型外延式
文件頁數(shù): 4/5頁
文件大?。?/td> 211K
代理商: 2SC6033
2SC6033
2004-07-01
4
r
th
– t
w
T
Collector-emitter voltage V
CE
(V)
Safe Operating Area
C
C
Pulse width tw (s)
1000
1
1000
0.01
0.1
1
10
100
10
100
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
=
25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2
)
10
1 ms*
10 ms*
VCEO max
100 μs*
100 ms*
IC max (Pulse)*
0.1
10
100
1
0.1
1
0.01
10 μs*
DC operation
Ta = 25°C
*
: Single nonrepetitive pulse
Ta
25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
IC max (Continuous)*
10 s*
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