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參數資料
| 型號： | 2SC5661T2LP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | VMT3, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 187K |
| 代理商： | 2SC5661T2LP |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Features
1) High transition frequency. (Typ. fT = 1.5GHz)
2) Small rbb’
Cc and high gain. (Typ. 6ps)
3) Small NF.
Packaging specifications and hFE
Type
2SC4725
EMT3
NP
AC
TL
3000
2SC5661
VMT3
NP
AC
T2L
8000
2SC4082
UMT3
NP
1C
T106
3000
2SC3837K
SMT3
NP
AC
T146
3000
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit
(pieces)
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
20
3
50
0.2
150
55 to +150
Unit
V
mA
0.15
2SC4082, 2SC3837K
2SC5661, 2SC4725
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Dimensions (Unit : mm)
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
(2) Base
(3) Collector
(1) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
2SC4725
2SC4082
2SC3837K
2SC5661
ROHM : VMT3
ROHM : EMT3
EIAJ : SC-75A
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
(1) Base
(2) Emitter
(3) Collector
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
Cob
rbb'Cc
NF
30
20
3
82
600
1500
0.9
0.5
180
1.5
V
μA
MHz
pF
IC
= 10μA
IC
= 1mA
IE
= 10μA
VCB
= 15V
VEB
= 2V
VCE(sat)
0.5
V
IC/IB
= 20mA/4mA
VCE/IC
= 10V/10mA
VCE
= 10V , IE = 10mA , f = 200MHz
VCB
= 10V , IE = 0A , f = 1MHz
VCB
= 10V , IC = 10mA , f = 31.8MHz
VCE
= 12V , IC = 2mA , f = 200MHz , Rg = 50Ω
613
ps
4.5
dB
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Collector-base time constant
Noise factor
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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相關代理商/技術參數 |
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| 2SC5661T2L-P | 制造商:ROHM Semiconductor 功能描述: |
| 2SC5662T2LN | 功能描述:兩極晶體管 - BJT VMT3 NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5662T2LP | 功能描述:兩極晶體管 - BJT NPN 11V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5663T2L | 功能描述:兩極晶體管 - BJT NPN 12V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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