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參數(shù)資料
| 型號： | 2SC5063 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | N-TYPE PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 62K |
| 代理商： | 2SC5063 |
2
Power Transistors
2SC5063
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
25
35
20
5
15
(1)
(3)
(2)
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
Ambient temperature Ta (C)
C
C
0
10
8
2
6
4
0
2.0
1.6
1.2
0.8
0.4
1.8
1.4
1.0
0.6
0.2
T
C
=25C
10mA
20mA
30mA
40mA
60mA
80mA
100mA
120mA
I
B
=200mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
0.03
Collector current I
C
(A)
0.3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=5
–25C
25C
T
C
=100C
C
C
0.01
3
1
0.1
0.03
Collector current I
C
(A)
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=5
T
C
=–25C
25C
100C
B
B
0.01
0.1
1
0.03
Collector current I
C
(A)
0.3
1
1000
100
10
3
30
300
V
CE
=5V
T
C
=100C
–25C
25C
F
F
0.001
0.01
0.1
1
0.003
Collector current I
C
(A)
0.03
0.3
0.1
0.3
1
3
10
30
100
300
1000
V
=10V
f=10MHz
T
C
=25C
T
T
0.1
Collector to base voltage V
CB
(V)
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
0
2.5
2.0
0.5
1.5
1.0
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=150V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
C
10ms
300ms
1ms
t=0.5ms
Collector to emitter voltage V
CE
(V)
C
C
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