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參數(shù)資料
| 型號： | 2SC2732 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SC2732 |
2SC2732
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
25
V
Emitter to base voltage
4
V
Collector current
20
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
25
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
—
—
0.5
μ
A
V
CB
= 10 V, I
C
= 0
I
C
= 10 mA, I
B
= 1 mA
Collector to emitter saturation
voltage
—
—
5
V
DC current transfer ratio
h
FE
f
T
Cob
30
60
—
V
CE
= 10 V, I
C
= 3 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
= 12 V, I
C
= 1 mA,
f = 900 MHz,
f
OSC
= 930 MHz (0dBm) ,
f
out
= 30 MHz
V
= 12 V, I
C
= 1 mA,
f = 900 MHz,
f
OSC
= 930 MHz (0dBm) ,
f
out
= 30 MHz
Gain bandwidth product
700
1000
—
MHz
Collector output capacitance
—
0.5
0.8
pF
Conversion gain
CG
—
7.0
—
dB
Noise figure
NF
—
10.0
—
dB
Note:
Marking is “EC”.
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PDF描述 |
|---|---|
| 2SC2734 | Silicon NPN Epitaxial |
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| 2SC2752L | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 500MA I(C) | TO-126 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2736 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-5930V .05A .15W ECB SURFACE MT |
| 2SC2737 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9220V .08A .6W BEC |
| 2SC2739 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220AB 500V 7A 40W |
| 2SC2750 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR MP-80150V 15A 100W BCE 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2751 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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