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參數(shù)資料
| 型號： | 2SB1180A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type darlington |
| 中文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SB1180A |
Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
1
Publication date: March 2003
SJD00056AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB1180
V
CEO
I
C
=
30 mA, I
B
=
0
60
80
V
2SB1180A
Collector-base cutoff
current (Emitter open)
2SB1180
I
CBO
V
CB
=
60 V, I
E
=
0
V
CB
=
80 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
3 V, I
C
=
4 A
V
CE
=
3 V, I
C
=
8 A
I
C
=
4 A, I
B
=
8 mA
I
C
=
4 A, I
B
=
8 mA
V
CE
=
3 V, I
C
=
1 A, f
=
1 MHz
100
100
2
μ
A
2SB1180A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
*
mA
Forward current transfer ratio
2
000
10
000
h
FE2
500
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
1.5
2
V
Base-emitter saturation voltage
V
Transition frequency
f
T
20
MHz
Turn-on time
t
on
t
stg
I
C
=
4 A, I
B1
=
8 mA, I
B2
=
8 mA
V
CC
=
50 V
0.5
μ
s
μ
s
μ
s
Storage time
2.0
Fall time
t
f
1.0
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
■
Features
High forward current transfer ratio h
FE
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
7.0
±
0.3
3.5
±
0.2
0 to 0.15
1
±
0
7
±
0
2
±
0
2
±
0
(
(
1
±
0
3.0
±
0.2
2.0
±
0.2
1.1
±
0.1
0.75
±
0.1
0.9
±
0.1
0 to 0.15
0.4
±
0.1
2.3
±
0.2
4.6
±
0.4
1
2
3
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB1180
V
CBO
60
80
60
80
7
8
12
V
2SB1180A
Collector-emitter voltage
(Base open)
2SB1180
V
CEO
V
2SB1180A
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
15
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) Self-supported type package is also prepared.
Rank
Q
P
h
FE1
2
000 to 5
000 4
000 to 10
000
Internal Connection
B
C
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1193 | For Midium-Speed Power Switching |
| 2SB1197 | PNP Silicon Epitaxial Transistors |
| 2SB1197-P | PNP Silicon Epitaxial Transistors |
| 2SB1197-Q | PNP Silicon Epitaxial Transistors |
| 2SB1197-R | PNP Silicon Epitaxial Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1180AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SB1180AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SB1180AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SB1180P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SB1180Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
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