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參數(shù)資料
| 型號： | 2SA900 |
| 英文描述： | Power Device - Power Transistors - Others |
| 中文描述： | 功率器件-功率晶體管-其他 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 2SA900 |
Power Transistors
2SA0900
(2SA900)
Silicon PNP epitaxial planar type
1
Publication date: April 2003
SJD00004BED
For low-frequency Power amplification
Complementary to 2SC1868
■
Features
Low collector-emitter saturation voltage V
CE(sat)
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
= 0
I
C
=
1 mA, I
B
= 0
I
E
=
10
μ
A, I
C
= 0
V
CB
=
10 V, I
E
=
0
V
CE
=
18 V, I
B
=
0
V
CE
=
2 V, I
C
=
500 mA
V
CE
=
2 V, I
C
=
1.5 A
I
C
=
1 A, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
6 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
6 V, I
E
= 0, f = 1 MHz
20
18
5
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector-base cutoff current (Emitter open)
I
CBO
1
10
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
h
FE1
*
Forward current transfer ratio
130
280
h
FE2
50
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
0.5
1.2
V
Base-emitter saturation voltage
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
40
pF
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
20
18
5
1
2
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
1.2
W
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Note) The part numbers in the parenthesis show conventional part number.
Rank
R
S
h
FE1
130 to 210
180 to 280
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA0914 | Power Device - Power Transistors - Others |
| 2SA914 | Power Device - Power Transistors - Others |
| 2SA0921 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SA921 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SA0963 | Power Device - Power Transistors - Others |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA900Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-126 |
| 2SA900R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA900-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA900S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-126 |
| 2SA900T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-126 |
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