參數(shù)資料
型號(hào): 2SA778AKTZ
元件分類(lèi): 小信號(hào)晶體管
英文描述: 50 mA, 180 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: SC-43A, TO-92(1), 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 195K
代理商: 2SA778AKTZ
2SC4410G
2
SJC00365AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Cob VCB
GUM IC
NF
I
C
0
160
40
120
80
0
80
60
20
40
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
0
2.4
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
Ta
= 25°C
45
A
40
A
35
A
20
A
30
A
25
A
15
A
10
A
5
A
IB
= 50 A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
02.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
VCE
= 1 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
240
200
160
120
80
40
VCE
= 1 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
12
10
8
6
4
2
VCE
= 1 V
f
= 800 MHz
Ta
= 25°C
Transition
frequency
f
T
(GHz
)
Collector current I
C (mA)
0.1
1
10
100
0
1.2
1.0
0.8
0.6
0.4
0.2
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
0.1
1
10
100
0
24
20
16
12
8
4
VCE
= 1 V
f
= 800 MHz
Ta
= 25°C
Maximum
unilateral
power
gain
G
UM
(dB
)
Collector current I
C (mA)
0.1
1
10
100
0
6
5
4
3
2
1
VCE
= 1 V
(Rg
= 50 )
f
= 800 MHz
Ta
= 25°C
Noise
figure
NF
(dB
)
Collector current I
C (mA)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA778K 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-150V -.05A .2W ECB
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2SA780 制造商:Distributed By MCM 功能描述:SUB ONLY HIT. TRANS. TO-202AA-50V -1A 10W BCE
2SA781 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 -20V -.2A .2W ECB
2SA781K 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-20V -.2A 25W ECB