參數(shù)資料
型號(hào)： 2N7002DCSM-JQR-A
廠商： SEMELAB LTD
元件分類： 小信號(hào)晶體管
英文描述： 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： CERAMIC, LCC2, 6 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 17K
代理商： 2N7002DCSM-JQR-A
V(BR)DSS Gate – Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS
Gate – Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID(on)*
On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS*
Forward Transconductance
gOS*
Common Source Output Conductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
tON
Turn–On Time
tOFF
Turn–Off Time
2N7002DCSM
ELECTRICAL CHARACTERISTICS (T
CASE = 25°C unless otherwise stated)
VGS = 0V
ID = 10A
VDS = VGS
ID = 0.25mA
VGS = ±20VVDS = 0V
VDS = 60V
VGS = 0V
TCASE = 125°C
VDS≥2VDS(ON) VGS = 10V
VGS = 5V
ID = 50mA
TCASE = 125°C
VGS = 10V
ID = 0.5A
TCASE = 125°C
VGS = 5V
ID = 50mA
VGS = 10V
ID = 0.5A
TCASE = 125°C
VDS = 10V
ID = 0.2A
VDS = 5V
ID = 50mA
VDS = 25V
VGS = 0V
f = 1MHz
VDD = 30V
VGEN = 10V
RL = 150
RG = 25
ID = 0.2A
60
70
1
2.15
2.5
±100
1
500
1000
57.5
9
13.5
2.5
7.5
4.4
13.5
0.25
0.375
1.25
3.75
2.2
6.75
80
170
500
16
50
11
25
720
V
nA
A
mA
V
ms
s
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 80
s , δ≤ 1%
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 6171
Issue 1
相關(guān)PDF資料
PDF描述
2N7002DCSM-JQR 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002DWT/R7 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002E-E3 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002FN3T/R 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002H6327 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002DSPT 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:Dual N-Channel Enhancement MOS FET
2N7002DW 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002DW _R1 _00001 制造商:PanJit Touch Screens 功能描述:
2N7002DW H6327 功能描述:MOSFET 2N-CH 60V 0.3A SOT363 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:OptiMOS™ 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
2N7002DW L6327 功能描述:MOSFET N-KANAL SML SIG MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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