參數(shù)資料
型號(hào)： 2N6515ZL1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： CASE 29-04, TO-226AA, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 180K
代理商： 2N6515ZL1
NPN 2N6515 2N6517 PNP 2N6520
http://onsemi.com
98
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
2N6515
(VCB = 250 Vdc, IE = 0)
2N6517, 2N6520
ICBO
–
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0)
2N6520
IEBO
–
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
hFE
35
20
50
30
50
30
45
20
25
15
–
300
200
220
200
–
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
–
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat)
–
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
–
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
fT
40
200
MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
–
6.0
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N6515, 2N6517
2N6520
Ceb
–
80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
ton
–
200
s
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
toff
–
3.5
s
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
相關(guān)PDF資料
PDF描述
2N6520RL 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6520RLRE 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6520ZL1 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1370C 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
2SA1370D 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6516 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors
2N6516BU 功能描述:兩極晶體管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6516TA 功能描述:兩極晶體管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6517 功能描述:兩極晶體管 - BJT 500mA 350V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6517 -AP 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 Ammo
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*