
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 1
1
Publication Order Number:
2N5400/D
2N5400, 2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
2N5400
2N5401
Unit
Collector Emitter Voltage
V
CEO
120
150
Vdc
Collector Base Voltage
V
CBO
130
160
Vdc
Emitter Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance,
JunctiontoCase
R
JC
83.3
°
C/W
2N
540x
AYWW
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
TO92
CASE 29
STYLE 1
123
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
*For additional information on our PbFree strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
COLLECTOR
3
2
BASE
1
EMITTER