- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371435 > 28F3204C3 (Intel Corp.) 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | 28F3204C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器) |
| 中文描述： | 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器（3V的高級(jí)堆芯片封裝存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 38/62頁(yè) |
| 文件大?。?/td> | 538K |
| 代理商： | 28F3204C3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)當(dāng)前第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)
28F1602C3, 28F3204C3
E
38
PRODUCT PREVIEW
V
CC
V
PP
12 V Fast Programming
Absolute Write Protection With V
PP
≤
V
PPLK
System Supply
12 V Supply
10
≤
K
V
CC
V
PP
System Supply
12 V Supply
Low Voltage and 12 V Fast Programming
V
CC
V
PP
System Supply
Prot#
(Logic Signal)
V
CC
V
PP
System Supply
Low-Voltage Programming
Low-Voltage Programming
Absolute Write Protection via Logic Signal
(Note 1)
NOTE:
1.
A resistor can be used if the F-V
CC
supply can sink adequate current based on resistor value.
Figure 12. Example Power Supply Configurations
11.3
Noise Reduction
Stacked-CSP
characteristics require careful device decoupling.
System designers should consider three supply
current issues for both the flash and SRAM:
memory’s
power
switching
1.
2.
3.
Standby current levels (I
CCS
)
Read current levels (I
CCR
)
Transient peaks produced by falling and rising
edges of F-CE#, S-CS
1
#, and S-CS
2
.
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
device should have a 0.1 μF ceramic capacitor
connected between each F-V
CC
/S-V
CC
and GND,
and between its F-V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
Noise issues within a system can cause devices to
operate erratically if it is not adequately filtered. In
order to avoid any noise interaction issues within a
system, it is recommended that the design contain
the appropriate number of decoupling capacitors in
the system. Noise issues can also be reduced if
leads to the device are kept very short, in order to
reduce inductance.
Decoupling capacitors between V
and V
reduce
voltage spikes by supplying the extra current
needed during switching. Placing these capacitors
as close to the device as possible reduces line
inductance.
The
capacitors
inductance capacitors; surface mount capacitors
typically exhibit lower inductance.
should
be
low
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F1604C3 | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器) |
| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F800C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F160S3 | 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F3204W30 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F320B3 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F320C3 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| 28F320J3D75 | 制造商:undefined 功能描述: |
| 28F320J5 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。