參數(shù)資料
型號(hào): 28F3204C3
廠商: Intel Corp.
英文描述: 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器)
中文描述: 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器(3V的高級(jí)堆芯片封裝存儲(chǔ)器)
文件頁(yè)數(shù): 36/62頁(yè)
文件大?。?/td> 538K
代理商: 28F3204C3
28F1602C3, 28F3204C3
E
36
PRODUCT PREVIEW
V
CC
3.0/2.7V
CS
1
# (E
1
)
2.2V
V
DR
CS
2
(E
2
)
GND
V
CC
3.0/2.7V
0.4V
GND
V
DR
CS
1
# Controlled
CS
2
Controlled
Data Retention Mode
t
SDR
t
RDR
Data Retention Mode
t
SDR
t
RDR
Figure 11. SRAM Data Retention Waveform
10.0 MIGRATION GUIDE
INFORMATION
Typically, it is important to discuss migration
compatibility between footprint between a new
product and existing products. In this specific case,
the Stacked CSP allows the system designer to
remove two separate memory footprints for
individual flash and SRAM and replace them with a
single footprint, thus resulting in an overall
reduction in board space required. This implies that
a new printed circuit board would be used to take
advantage of this feature.
Since the flash in Stacked-CSP shares the same
features as the Advanced+ Boot Block Features,
conversions from the Advanced Boot Block are
described in AP-658 Designing for Upgrade to the
Advanced+ Boot Block Flash Memory, order
number 292216.
Please contact your local Intel representation for
detailed information about specific Flash + SRAM
system migrations.
11.0 SYSTEM DESIGN
CONSIDERATIONS
This section contains information that would have
been contained in a product design guide in earlier
generations. In an effort to simplify the amount of
documentation,
relevant
considerations have been combined into this
document.
system
design
11.1
Background
The new Intel Advanced+ Boot Block Stacked chip
scale package combines the features of the
Advanced+ Boot Block flash memory architecture
with a low-power SRAM to achieve an overall
reduction in system board space. This enables
applications to integrate security with simple
software and hardware configurations, while also
combining the system SRAM and flash into one
common footprint. This section discusses how to
take full advantage of the new 3 Volt Advanced+
Boot Block Stacked Chip Scale Package.
相關(guān)PDF資料
PDF描述
28F1604C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160S3 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F3204W30 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F320B3 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F320C3 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT