參數(shù)資料
型號: 28F128J3A
廠商: Intel Corp.
英文描述: 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲器)
中文描述: 3伏特英特爾StrataFlash存儲器(128兆位3伏地層的閃速存儲器)
文件頁數(shù): 41/58頁
文件大?。?/td> 574K
代理商: 28F128J3A
28F128J3A, 28F640J3A, 28F320J3A
PRODUCT PREVIEW
35
0606_11b
Figure 12. Set Block Lock-Bit Flowchart
Start
Write 60H,
Block Address
Write 01H/F1H,
Block Address
Read Status Register
SR.7 =
Full Status
Check if Desired
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Write
Write
Standby
Repeat for subsequent lock-bit operations.
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations
Write FFH after the last lock-bit set operation to place device in read
array mode.
Bus
Operation
Standby
SR.5, SR.4, and SR.3 are only cleared by the Clear Status Register
command, in cases where multiple lock-bits are set before full status is
checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
1
0
Command
Set Block Lock-Bit
Setup
Set Block Lock-Bit
Confirm
Comments
Data = 60H
Addr =Block Address
Data = 01H
Addr = Block Address
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = Programming Voltage Error
Detect
Read Status Register
Data (See Above)
Voltage Range Error
SR.3 =
1
0
Command Sequence
Error
SR.4,5 =
1
0
Set Lock-Bit Error
SR.4 =
1
0
Read
Status Register Data
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.4
1 = Set Lock-Bit Error
Set Lock-Bit
Successful
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