參數(shù)資料
型號: 28F020
廠商: Intel Corp.
英文描述: 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器)
中文描述: 5伏體擦除閃存(5V的整體擦寫閃速存儲器)
文件頁數(shù): 33/47頁
文件大?。?/td> 758K
代理商: 28F020
E
4.11
28F010/28F020
33
DC Characteristics
—28F020—CMOS Compatible
Extended Temperature Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
CC5
V
CC
Erase Verify Current
1, 2
5.0
30
mA
V
PP
= V
PPH
Erase Verify in Progress
I
PPS
V
PP
Leakage Current
1
±10
μA
V
PP
V
CC
I
PP1
V
PP
Read Current,
ID Current or Standby
Current
1
90
200
μA
V
PP
> V
CC
±10
V
PP
V
CC
I
PP2
V
PP
Programming Current
1, 2
8
30
mA
V
PP
= V
PPH
Programming in
Progress
I
PP3
V
PP
Erase Current
1, 2
10
30
mA
V
PP
= V
PPH
Erasure in
Progress
I
PP4
V
PP
Program Verify
Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Program Verify
in Progress
I
PP5
V
PP
Erase Verify Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Erase Verify in Progress
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7
V
CC
V
CC
+
0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
OH1
Output High Voltage
0.85
V
CC
V
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
OH2
V
CC
0.4
V
CC
= V
CC
Min
I
OH
= –100 μA
V
ID
A
Intelligent Identifier
Voltage
11.50
13.00
V
I
ID
A
Intelligent Identifier
Current
1, 2
90
500
μA
A
9
= V
ID
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