參數(shù)資料
型號(hào): 28F016XD
廠商: Intel Corp.
英文描述: 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器)
中文描述: 16兆位同步閃存(1,600位內(nèi)存接口閃速存儲(chǔ)器)
文件頁(yè)數(shù): 24/54頁(yè)
文件大小: 760K
代理商: 28F016XD
28F016XD FLASH MEMORY
E
24
NOTES:
1.
2.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 3.3V, V
PP
= 12.0V or 5.0V, T = +25
°
C.
I
CCES
is specified with the device de-selected. If the device is read while in erase
suspend mode, current draw is the sum of
I
CCES
and I
CC1
/I
CC4
.
Block erases, word programs and lock block operations are inhibited when V
= V
PPLK
and not guaranteed in the ranges
between V
PPLK(max)
and V
PPH1(min)
, between V
PPH1(max)
and V
PPH2(min)
,
and above V
PPH2(max)
.
Automatic Power Saving (APS) reduces I
CC1
and I
CC4
to 3.0 mA typical in static operation.
CMOS inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL inputs are either V
IL
or V
IH
.
Sampled, but not 100% tested. Guaranteed by design.
3.
4.
5.
6.
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