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參數(shù)資料
| 型號(hào)： | HYMP112S64LMP8-E4 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | DDR2 SDRAM SO-DIMM |
| 中文描述： | DDR2 SDRAM的SO - DIMM插槽 |
| 文件頁(yè)數(shù)： | 6/17頁(yè) |
| 文件大?。?/td> | 405K |
| 代理商： | HYMP112S64LMP8-E4 |
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HYMP112S64(L)MP8
Rev. 0.1/ July 2004
6
ABSOLUTE MAXIMUM RATINGS
Note :
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating conditions for extended
periods may affect reliablility.
2. If the DRAM case temperature is Above 85
o
C,
the Auto-Refresh command interval has to be reduced to tREFI=3.9
.
For Measurement conditions of T
CASE
, please refer to the JEDEC document JESD51-2.
3. Up to 9850 ft.
Operating Condtions(AC&DC)
DC OPERATING CONDITIONS
(SSTL_1.8)
Note :
1. V
DDQ
must be less than or equal to V
DD
.
2. Peak to peak ac noise on V
REF
may not exeed +/-2% V
REF
(dc)
3. VTT of transmitting device must track VREF of receiving device.
Input DC Logic Level
Parameter
Symbol
Value
Unit
Note
Operating temperature(ambient)
T
OPR
0 ~ +55
o
C
1
DRAM Component Case Temperature Range
TCASE
0 ~+95
o
C
2
Operating Humidity(relative)
H
OPR
10 to 90
%
1
Storage Temperature
TSTG
-50 ~ +100
o
C
1
Storage Humidity(without condensation)
H
STG
5 to 95
o
C
1
Barometric Pressure(operating & storage)
P
BAR
105 to 69
K Pascal
1,3
Parameter
Symbol
Min
Max
Unit
Note
Power Supply Voltage
VDD
1.7
1.9
V
VDDQ
1.7
1.9
V
1
Input Reference Voltage
VREF
0.49 x VDDQ
0.51 x VDDQ
V
2
EEPROM Supply Voltage
VDDSPD
1.7
3.6
V
Termination Voltage
VTT
VREF-0.04
VREF+0.04
V
3
Parameter
Symbol
Min
Max
Unit
Note
Input High Voltage
VIH(DC)
VREF + 0.125
VDDQ + 0.3
V
Input Low Voltage
VIL(DC)
-0.30
VREF - 0.125
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYMP112S64M8-C4 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. |
| HYMP112S64M8-E3 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. |
| HYMP112S64MP8 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:DDR2 SDRAM SO-DIMM |
| HYMP112S64MP8-C4 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. |
| HYMP112S64MP8-C5 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:DDR2 SDRAM SO-DIMM |
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