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參數(shù)資料
| 型號(hào)： | 1SS303 |
| 廠商： | NEC Corp. |
| 英文描述： | SILICON SWITCHING DIODES |
| 中文描述： | 硅開關(guān)二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | 1SS303 |
1987
SILICON SWITCHING DIODE
1SS303
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE
DATA SHEET
Document No. D16308EJ2V0DS00 (2nd edition)
(Previous No. DC-2100)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Low capacitance: C
t
= 2.5 pF TYP.
High speed switching: t
rr
= 4.0 ns MAX.
Wide applications including switching, limitter, clipper.
Double diode configuration assures economical use.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25°C)
Peak Reverse Voltage
V
RM
75
V
DC Reverse Voltage
Surge Current (1
μ
s)
Note
V
R
50
V
I
FSM
6.0
A
Surge Current (1
μ
s)
Peak Forward Current
Note
I
FSM
4.0
A
I
FM
450
mA
Peak Forward Current
Average Rectified Current
Note
I
FM
300
mA
I
O
150
mA
Average Rectified Current
I
O
100
mA
Maximum Temperatures
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
stg
–55 to + 150
°C
Thermal Resistance
Junction to Ambient
Note
R
th(j-a)
1.0
°C/mW
Junction to Ambient
R
th(j-a)
0.85
°C/mW
Note
Both diodes loaded simultaneously.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F1
I
F
= 10 mA
0.72
1.0
V
V
F2
I
F
= 50 mA
0.88
1.1
V
Forward Voltage
V
F3
I
F
= 100 mA
1.0
1.2
V
Reverse Current
I
R
V
R
= 50 V
0.1
μ
A
Capacitance
C
t
V
R
= 0 V, f = 1.0 MHz
2.5
4.0
pF
Reverse Recovery Time
t
rr
See Test Circuit.
4.0
ns
PACKAGE DIMENSIONS (Unit: mm)
2.1
±
0.1
1.25
±
0.1
2
±
0
0
±
0
3
Marking
2
1
0
+
0
0
0
+
0
0
0
0
0
0
0
+
0
0
CONNECTION DIAGRAM (Top View)
2
1
3
1. Cathode
2. Cathode
3. Anode
Marking : A4
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PDF描述 |
|---|---|
| 1SS304 | SILICON SWITCHING DIODES |
| 1SS305 | SILICON SWITCHING DIODES |
| 1SS345 | UHF Detector, Mixer Applications |
| 1SS350 | UHF Detector, Mixer Applications |
| 1SS351 | UHF Detector, Mixer Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1SS303(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 1SS304 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE |
| 1SS305 | 制造商:NEC 制造商全稱:NEC 功能描述:SILICON SWITCHING DIODES |
| 1SS305-T1-A | 制造商:Renesas Electronics 功能描述:Diode Switching 100V 0.1A 3-Pin SOT-323 T/R 制造商:Renesas Electronics 功能描述:Diode Switching 100V 0.1A 3-Pin SOT-323 T/R Cut Tape |
| 1SS306 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon Epitaxial Planar Type |
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