參數(shù)資料
型號(hào): μPD45D128842
廠(chǎng)商: NEC Corp.
英文描述: 128 M-bit Synchronous DRAM with Double Data Rate(128 同步動(dòng)態(tài)RAM)
中文描述: 128 M位同步雙數(shù)據(jù)速率(128同步動(dòng)態(tài)RAM的內(nèi)存)
文件頁(yè)數(shù): 22/80頁(yè)
文件大?。?/td> 637K
代理商: ΜPD45D128842
22
μ
PD45D128442, 45D128842, 45D128164
Preliminary Data Sheet
6. Programming the Mode Register
The mode register is programmed by the Mode register set command using address bits BA0, BA1, A11 through A0
as data inputs. The register retains data until it is reprogrammed or the device loses power.
The mode register has four fields ;
Option
/CAS latency
Wrap type
Burst length
: BA0, BA1, A11 through A7
: A6 through A4
: A3
: A2 through A0
Following mode register programming, no command can be issued before at least 2 CLK have elapsed.
/CAS Latency
/CAS latency is the mode critical of the parameters being set. It tells the device how many clocks must elapse
before the data will be available.
The value is determined by the frequency of the clock and the speed grade of the device.
shows the relationship of /CAS latency to the clock period and speed grade of the device.
Burst Length
Burst length is the number of words that will be output or input in a read or write cycle. After a read burst is
completed, the output bus will become Hi-Z.
The burst length is programmable as 2, 4, 8.
Wrap Type (Burst Sequence)
The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either
“Sequential” or “Interleave”. The method chosen will depend on the type of CPU in the system.
Some microprocessor cache system are optimized for sequential addressing and others for interleaved addressing.
7.1 Burst Length and Sequence
shows the addressing sequence for each burst length using them.
Both sequences support bursts of 2, 4 and 8.
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