參數(shù)資料
型號(hào)： μPD4265165
廠商： NEC Corp.
英文描述： 64 M-Bit Dynamic Ram(64M 動(dòng)態(tài)存儲(chǔ)器)
中文描述： 64 m位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（6400動(dòng)態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 38/48頁(yè)
文件大?。?/td> 535K
代理商： ΜPD4265165
μ
PD42S65165, 4265165
38
CAS Before RAS Self Refresh Cycle (Only for the
μ
PD42S65165)
Remark
Address, OE: Don’t care L I/O, U I/O: Hi-Z
Cautions on Use of CAS Before RAS Self Refresh
CAS before RAS self refresh can be used independently when used in combination with distributed CAS before
RAS long refresh; However, when used in combination with burst CAS before RAS long refresh or with long RAS
only refresh (both distributed and burst), the following cautions must be observed.
(1) Normal Combined Use of CAS Before RAS Self Refresh and Burst CAS Before RAS Long Refresh
When CAS before RAS self refresh and burst CAS before RAS long refresh are used in combination, please
perform CAS before RAS refresh 4,096 times within a 64 ms interval just before and after setting CAS before
RAS self refresh.
(2) Normal Combined Use of CAS Before RAS Self Refresh and Long RAS Only Refresh
When CAS before RAS self refresh and RAS only refresh are used in combination, please perform RAS only
refresh 4,096 times within a 64 ms interval just before and after setting CAS before RAS self refresh.
(3)
If t
RASS (MIN.)
is not satisfied at the beginning of CAS before RAS self refresh cycles (t
RAS
< 100
μ
s), CAS before
RAS refresh cycles will be executed one time.
If 10
μ
s < t
RAS
< 100
μ
s, RAS precharge time for CAS before RAS self refresh (t
RPS
) is applied.
And refresh cycles (4,096/128 ms) should be met.
For details, please refer to
How to use DRAM
User’s Manual.
RAS
UCAS
LCAS
WE
V
IH_
V
IL_
V
IH_
V
IL_
V
IH_
V
IL_
t
CSR
t
WSR
t
WHR
t
RASS
t
RPS
t
CRP
t
RPC
t
CHS
t
CPN
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